Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching
نویسندگان
چکیده
Silicon nitride (Si3N4) etching using CF4/O2 mixed with N2 has become very popular in 3D NAND flash structures. However, studies on Si3N4 dry based optical emission spectroscopy (OES) are lacking; particular, no study reported the use of OES for analyzing N2-mixed plasma. Thus, this demonstrates an OES-based approach a mixed-gas plasma thin films. The state each single gas CF4, O2, and as well that plasmas heterogeneous gases CF4/O2, CF4/N2, O2/N2 was investigated to analyze Furthermore, amount varied from 0 8 sccm. relationship between analysis results etch rate subsequently established film etching, explanation verified through chemical reaction modeling surface reaction. Therefore, our confirmed alteration species quantity occurred when added effect etch.
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ژورنال
عنوان ژورنال: Coatings
سال: 2022
ISSN: ['2079-6412']
DOI: https://doi.org/10.3390/coatings12081064